apt11gp60k.pdf datasheet:

TYPICAL PERFORMANCE CURVES APT11GP60K_SAAPT11GP60KAPT11GP60SA600V(K) POWER MOS 7 IGBT (SA)TO-220D2PAKThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,Chigh voltage switching applications and has been optimized for high frequencyG Eswitchmode power supplies.GCE Low Conduction Loss SSOA ratedC Low Gate ChargeG Ultrafast Tail Current shutoffEMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.Symbol Parameter APT11GP60K_SA UNITVCESCollector-Emitter Voltage600VGE Gate-Emitter Voltage20 Volts30VGEM Gate-Emitter Voltage TransientIC1 Continuous Collector Current @ TC = 25C 41AmpsIC2 Continuous Collector Current @ TC = 100C 20ICM Pulsed Collector Current 1 @ TC = 150C45SSOA Switching Sa