apt15gp60b.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

apt15gp60b.pdf Principales características:

APT15GP60B 600V POWER MOS 7 IGBT TO-247 The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. G C E Low Conduction Loss 100 kHz operation @ 400V, 19A C Low Gate Charge 200 kHz operation @ 400V, 12A G Ultrafast Tail Current shutoff SSOA rated E MAXIMUM RATINGS All Ratings TC = 25 C unless otherwise specified. Symbol Parameter APT15GP60B UNIT VCES Collector-Emitter Voltage 600 VGE Gate-Emitter Voltage 20 Volts 30 VGEM Gate-Emitter Voltage Transient IC1 Continuous Collector Current @ TC = 25 C 56 Amps IC2 Continuous Collector Current @ TC = 110 C 27 ICM Pulsed Collector Current 1 @ TC = 25 C 65 SSOA Switching Safe Operating Ar