ftz15n35g.pdf Principales características:

ftz15n35gftz15n35g

FTZ15N35G 350V N-Channel MOSFET General Features ESD improved Capability BV R (Max.) I DSX DS(ON) D Proprietary Advanced Planar Technology Rugged Polysilicon Gate Cell Structure 15 350V 200mA Fast Switching Speed RoHS Compliant SOT-23 Halogen-free available D Applications Drain High Efficiency SMPS Source Adaptor/Charger G Active PFC Gate S Ordering Information Part Number Package Marking Remark FTZ15N35G SOT-23 N35 Halogen Free Absolute Maximum Ratings T =25 unless otherwise specified A Symbol Parameter FTZ15N35G Unit V Drain-to-Source Voltage[1] 350 V DSX V Drain-to-Gate Voltage[1] 350 V DGX I Continuous Drain Current 0.2 D A I Pulsed Drain Current[2] 0.6 DM P Power Dissipation 0.50 W D V Gate-to-Source Voltage 20 V GS Gate Source ESD V 200 V ESD(G-S) IEC, C=150pF, R=3

 

Keywords - ALL TRANSISTORS. Principales características

 ftz15n35g.pdf Design, MOSFET, Power

 ftz15n35g.pdf RoHS Compliant, Service, Triacs, Semiconductor

 ftz15n35g.pdf Database, Innovation, IC, Electricity