2n3906n.pdf Principales características:
2N3906N Semiconductor Semiconductor PNP Silicon Transistor Descriptions General small signal application Switching application Features Low collector-emitter saturation voltage 0.4V (Max.) @ IC=-50mA, IB=-5mA Low collector output capacitance 4.5pF (Max.) @ VCB=-5V, IE=0, f=1MHz Complementary pair with 2N3904N Ordering Information Type NO. Marking Package Code 2N3906N 2N3906 T0-92N Outline Dimensions unit mm 4.20 4.40 2.25 Max. 0.52 Max. 0.90 Max. 1.27 Typ. 0.40 Max. 1 2 3 3.55 Typ PIN Connections 1. Emitter 2. Base 3. Collector KSD-T0C039-000 1 4.20 4.40 13.50 14.50 2.14 Typ. 3.09 3.29 2N3906N Absolute Maximum Ratings (Ta=25 C) Characteristic Symbol Rating Unit Collector-base voltage VCBO -40 V Collector-emitter voltage VCEO -40 V Emitter-base voltage VEBO -5 V Collector current IC -200 mA Collec
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