blg75t65fdk-f.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

blg75t65fdk-f.pdf Principales características:

BLG75T65FDK IGBT 1 Description Step-Down Converter BLG75T65FDK is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V , optimized switching CE(sat) performance and low gate charge Q . The IGBT is g suitable device for Photovoltaic, UPS, Boost and high switching frequency applications. KEY CHARACTERISTICS Parameter Value Unit V 650 V CES I 75 A C V 2.0 V CE(sat).typ FEATURES Fast Switching Low V CE(sat) Positive temperature coefficient Fast recovery anti-parallel diode RoHS product APPLICATIONS TO-247 Photovoltaic converters UPS Boost ORDERING INFORMATION Device Marking Ordering Codes Package Product Code Packing 75T65FDK BLG75T65FDK-F TO-247 G75T65FDK Tube BLG75T65FDK-F (2) Package type XXXX Product Code (1) Chip name XXXX YYWW