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ss8050.pdf Principales características:

SS8050 Transistors SOT-23 Plastic-Encapsulate Transistors(NPN) RHOS Features SOT-23 High Collector Current Complementary to SS8550 Maximum Ratings (Ratings at 25 ambient temperature unless otherwise specified.) Symbol Parameter Value Unit V Collector-Base Voltage 40 V CBO 1. BASE VCEO Collector-Emitter Voltage 25 V 2. EMITTER 3. COLLECTOR VEBO Emitter-Base Voltage 5 V I Collector Current 1.5 A C MARKING Y1 P Collector Power Dissipation 300 mW C R Thermal Resistance From Junction To Ambient 417 /W JA T Junction Temperature 150 j Tstg Storage Temperature -55 +150 Electrical Characteristics (Ratings at 25 ambient temperature unless otherwise specified). Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 100 A, IE=0 40 V Collector-emitter breakdown voltage V(

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 ss8050.pdf Design, MOSFET, Power

 ss8050.pdf RoHS Compliant, Service, Triacs, Semiconductor

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