ss8050.pdf datasheet:

SS8050Transistors SOT-23 Plastic-Encapsulate Transistors(NPN) RHOS FeaturesSOT-23 High Collector Current Complementary to SS8550 Maximum Ratings (Ratings at 25 ambient temperature unless otherwise specified.) Symbol Parameter Value Unit V Collector-Base Voltage 40 V CBO1. BASE VCEO Collector-Emitter Voltage 25 V 2. EMITTER 3. COLLECTOR VEBO Emitter-Base Voltage 5 V I Collector Current 1.5 A CMARKING: Y1P Collector Power Dissipation 300 mW CR Thermal Resistance From Junction To Ambient 417 /W JAT Junction Temperature 150 jTstg Storage Temperature -55+150 Electrical Characteristics (Ratings at 25 ambient temperature unless otherwise specified). Parameter Symbol Test conditions MIN TYP MAX UNITCollector-base breakdown voltage V(BR)CBO IC= 100A, IE=0 40 VCollector-emitter breakdown voltage V(