mshm60p14.pdf Principales características:
MSHM60P14 P-Channel 60-V (D-S) MOSFET Description Graphic Symbol The device is using trench DMOS technology. This advanced technology has been especially tailored to minimize R , provide superior switching performance, DS(ON) and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. Features R =70m @ V =-10V DS(ON) GS Fast switching Package Dimension 100% EAS Guaranteed Green Device Available Typical Applications Notebook Load Switch Networking LED Lighting Millimeter Millimeter REF. REF. Package type PDFN 3.3X3.3 Min. Nom. Max. Min. Nom. Max. A 0.70 0.75 0.80 E1 3.00 3.15 3.20 AEC-Q101 qualification available b 0.25 0.30 0.35 E2 2.39 2.49 2.59 C 0.10 0.15 0.25 e 0.65 BSC D 3.25 3.35 3.45 H 0.30 0.39 0.5
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mshm60p14.pdf Design, MOSFET, Power
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Parámetros del transistor bipolar y su interrelación.
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