cs55n50.pdf Principales características:
CS55N50 N-Channel Trench Power MOSFET General Description The CS55N50 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching . Features VDS=55V; ID=105A@ VGS=10V; RDS(ON)
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cs55n50.pdf Design, MOSFET, Power
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Parámetros del transistor bipolar y su interrelación.
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