2n2221 2.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

2n2221 2.pdf Principales características:

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR SWITCHING TRANSISTORS 2N2221 2N2222 TO-18 Metal Can Package Switching and Linear Application DC and VHF Amplifier Applications ABSOLUTE MAXIMUM RATINGS (Ta=25 C unless specified otherwise) DESCRIPTION SYMBOL 2N2221, 22 UNIT VCEO Collector Emitter Voltage 30 V VCBO Collector Base Voltage 60 V VEBO Emitter Base Voltage 5V IC Collector Current Continuous 800 mA PD Power Dissipation @Ta=25 C 500 mW Derate Above 25 C 2.28 mW/ C PD Power Dissipation @ Tc=25 C 1.2 W Derate Above 25 C 6.85 mW/ C Tj, Tstg -65 to +200 Operating and Storage Junction C Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 C unless specified otherwise ) DESCRIPTION SYMBOL TEST CONDITION VALUE MIN MAX UNIT BVCEO IC=10mA,IB=0 Collector Emitter Breakdown Voltage 30 V BVC