2n2904 05.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

2n2904 05.pdf Principales características:

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR SWITCHING TRANSISTORS 2N2904 2N2905 TO-39 Metal Can Package General Purpose Transistor ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT VCEO Collector Emitter Voltage 40 V VCBO Collector Base Voltage 60 V VEBO Emitter Base Voltage 5 V IC Collector Current Continuous 600 mA Power Dissipation @ Ta=25 C PD 600 mW Derate Above 25 C 3.43 mW/ C Power Dissipation @ Tc=25 C PD 3.0 W Derate Above 25 C 17.2 mW/ C Operating And Storage Junction Tj, Tstg - 65 to +200 C Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 C unless specified otherwise ) DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNIT *VCEO IC=10mA, IB=0 Collector Emitter Voltage 40 V VCBO Collector Base Voltage IC=10 A, IE=0 60 V VEBO Emitter Base Voltage IE=10 A, IC=0 5