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2n5415 16.pdf Principales características:

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON HIGH VOLTAGE TRANSISTOR 2N 5415, 16 TO-39 Metal Can Package High Speed Switching and Linear amplifier Appliances in Military, Industrial and Commercial Equipment. ABSOLUTE MAXIMUM RATINGS (Ta=25 C unless specified otherwise) DESCRIPTION SYMBOL 2N5415 2N5416 UNITS VCEO Collector Emitter Voltage 200 300 V VCBO Collector Base Voltage 200 350 V VEBO Emitter Base Voltage 46 V IC Collector Current Continuous (--------------------1------------------) A IB Base Current Continuous (-----------------0.5------------------) A PD Power Dissipation @ Ta=50 C (--------------------1------------------) W Derate Above 25 C mW/ C PD Power Dissipation@ Tc=25 C (------------------10------------------- W Derate Above 25 C Junction Temperature Tj (--------------------200-----

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