2n4416-a.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

2n4416-a.pdf Principales características:

TM 2N4416 Central 2N4416A Semiconductor Corp. N-CHANNEL JFET DESCRIPTION The CENTRAL SEMICONDUCTOR 2N4416 and 2N4416A are silicon N-Channel Junction Field Effect Transistors designed for VHF amplifier and mixer applications. MARKING CODE Full Part Nmber JEDEC TO-72 CASE MAXIMUM RATINGS (TA=25 C) SYMBOL 2N4416 2N4416A UNITS Gate-Drain Voltage VGD 30 35 V Gate-Source Voltage VGS 30 35 V Drain-Source Voltage VDS 30 35 V Gate Current IG 10 10 mA Power Dissipation PD 300 300 mW Operating and Storage Junction Temperature TJ,Tstg -65 to +200 C ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) 2N4416 2N4416A SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS IGSS VGS=20V, VDS=0V - 0.1 -- 0.1 nA IGSS VGS=20V, VDS=0V, TA=150 C - 0.1 0.1 A IDSS VDS=15V, VGS=0V 5.0 15 5.0 15 mA BVGSS VDS=0V, IG=1.0 A 30 - 35 - V VGS(OFF) VDS=15V, ID=1.0nA - 6.0 2.5 6.