cep6086 ceb6086.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

cep6086 ceb6086.pdf Principales características:

CEP6086/CEB6086 N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 70A, RDS(ON) = 9.2m @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS 20 V Drain Current-Continuous@ TC = 25 C 70 A ID @ TC = 100 C 49 A Drain Current-Pulsed a IDM 280 A Maximum Power Dissipation @ TC = 25 C 75 W PD - Derate above 25 C 0.43 W/ C Single Pulsed Avalanche Energy d EAS 75.6 mJ Single Pulsed Avalanche Current d IAS 55 A Operating and Store Temperature Range TJ,Tstg -55 to 175 C Thermal Characteristics Parameter Symbol Limit Units Thermal Resistance, Juncti