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CEP6086/CEB6086N-Channel Enhancement Mode Field Effect TransistorFEATURES60V, 70A, RDS(ON) = 9.2m @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-220 & TO-263 package.GCEB SERIESCEP SERIESTO-263(DD-PAK) STO-220ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise notedParameter Symbol Limit UnitsDrain-Source Voltage VDS 60 VGate-Source Voltage VGS 20 VDrain Current-Continuous@ TC = 25 C 70 AID @ TC = 100 C 49 ADrain Current-Pulsed a IDM 280 AMaximum Power Dissipation @ TC = 25 C 75 WPD- Derate above 25 C 0.43 W/ CSingle Pulsed Avalanche Energy d EAS 75.6 mJSingle Pulsed Avalanche Current d IAS 55 AOperating and Store Temperature Range TJ,Tstg -55 to 175 CThermal CharacteristicsParameter Symbol Limit UnitsThermal Resistance, Juncti