Todos los transistores

 

cmt04n60.pdf Principales características:

cmt04n60cmt04n60

CMT04N60 POWER MOSFET GENERAL DESCRIPTION FEATURES This advanced high voltage MOSFET is designed to Higher Current Rating withstand high energy in the avalanche mode and switch Lower Rds(on) efficiently. This new high energy device also offers a Lower Capacitances drain-to-source diode with fast recovery time. Designed for Lower Total Gate Charge high voltage, high speed switching applications such as Tighter VSD Specifications power supplies, converters, power motor controls and Avalanche Energy Specified bridge circuits. PIN CONFIGURATION SYMBOL D TO-220/TO-220FP TO-252 Front View Front View G S 1 2 3 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Drain to Current Continuous ID 4.0 A Pulsed IDM 14 Gate-to-Source Voltage Continue VGS 30 V Non-repetitive VGSM 40 V Total Power Dissipati

 

Keywords - ALL TRANSISTORS. Principales características

 cmt04n60.pdf Design, MOSFET, Power

 cmt04n60.pdf RoHS Compliant, Service, Triacs, Semiconductor

 cmt04n60.pdf Database, Innovation, IC, Electricity

 

 
Back to Top

 


 
.