cmt04n60.pdf datasheet:

CMT04N60 POWER MOSFET GENERAL DESCRIPTION FEATURES This advanced high voltage MOSFET is designed to Higher Current Rating withstand high energy in the avalanche mode and switch Lower Rds(on)efficiently. This new high energy device also offers a Lower Capacitancesdrain-to-source diode with fast recovery time. Designed for Lower Total Gate Charge high voltage, high speed switching applications such as Tighter VSD Specifications power supplies, converters, power motor controls and Avalanche Energy Specified bridge circuits. PIN CONFIGURATION SYMBOL DTO-220/TO-220FP TO-252 Front View Front View GS1 2 3N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS Rating Symbol Value UnitDrain to Current Continuous ID 4.0 A Pulsed IDM 14 Gate-to-Source Voltage Continue VGS 30 V Non-repetitive VGSM 40 V Total Power Dissipati