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cs10n60fa9hd.pdf Principales características:

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CS10N60FA9HD 600V Silicon N-Channel Power MOSFET Features Outline Fast switching. TO-220F ESD improved capability. 0.189(4.80) 0.173(4.40) Low gate charge. 0.409(10.40) 0.378(9.60) 0.114(2.90) Low reverse transfer capacitances. 0.098(2.50) 100% single pulse avalanche energy test. 0.638(16.20) 0.606(15.40) Marking code Mechanical data G D S Epoxy UL94-V0 rated flame retardant. 0.056(1.42) 0.102(2.60) Case JEDEC TO-220F molded plastic body. 0.044(1.12) Drain 0.082(2.10) Terminals Solder plated, solderable per 0.551(14.0) 0.472(12.0) MIL-STD-750, Method 2026. Polarity As marked. 0.035(0.90) Gate 0.028(0.70) Mounting Position Any. 0.022(0.55) 0.108(2.74) Weight Approximated 2.25 gram. 0.014(0.35) 0.092(2.34) Source Dimensions in inches and (millimeters) Absolute(TC = 25OC unless

 

Keywords - ALL TRANSISTORS. Principales características

 cs10n60fa9hd.pdf Design, MOSFET, Power

 cs10n60fa9hd.pdf RoHS Compliant, Service, Triacs, Semiconductor

 cs10n60fa9hd.pdf Database, Innovation, IC, Electricity

 

 
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