cs10n60fa9hd.pdf datasheet:

CS10N60FA9HD600V Silicon N-Channel Power MOSFET Features Outline Fast switching. TO-220F ESD improved capability.0.189(4.80)0.173(4.40) Low gate charge.0.409(10.40)0.378(9.60) 0.114(2.90) Low reverse transfer capacitances.0.098(2.50) 100% single pulse avalanche energy test.0.638(16.20)0.606(15.40)Marking code Mechanical dataG D S Epoxy : UL94-V0 rated flame retardant.0.056(1.42)0.102(2.60) Case : JEDEC TO-220F molded plastic body.0.044(1.12)Drain0.082(2.10) Terminals : Solder plated, solderable per0.551(14.0)0.472(12.0)MIL-STD-750, Method 2026. Polarity: As marked.0.035(0.90)Gate0.028(0.70) Mounting Position : Any.0.022(0.55)0.108(2.74) Weight : Approximated 2.25 gram.0.014(0.35)0.092(2.34)SourceDimensions in inches and (millimeters) Absolute(TC = 25OC unless