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AGM412D Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 40 -- -- V GS D DSS Zero Gate Voltage Drain Current V =40V,V =0V -- -- 1 A DS GS I DSS V = 20V,V =0V -- -- nA GS DS IGSS Gate-Body Leakage Current 100 VGS(th) Gate Threshold Voltage V =V ,I =250 A DS GS D 1.2 1.4 2.2 V g Forward Transconductance V =5V,I =10A -- -- S DS D FS 17 V =10V, I =15A GS D -- 11 14 m R Drain-Source On-State Resistance DS(on) V =4.5V, I =10A -- GS D m 12.5 22 Dynamic Characteristics -- -- C Input Capacitance pF iss 1296 VDS=20V,VGS=0V C Output Capacitance oss ,F=1MHZ -- -- pF 87.6 C Reverse Transfer Capacitance rss -- -- pF 71.5 =0V, Rg Gate resistance VGS -- 1.8 -- =0V,f=1.0MHz VDS Switching Times Turn-on Del

 

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