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AGM412MPA Table 3. N- Channel Electrical Characteristics (TJ=25 unless otherwisenoted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 40 -- -- V GS D DSS Zero Gate Voltage Drain Current V =40V,V =0V -- -- 1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- nA GS DS 100 I GSS VGS(th) Gate Threshold Voltage V =V ,I =250 A DS GS D 1.2 -- 2.2 V gFS Forward Transconductance V =5V,I =10A -- 9 -- S DS D V =10V, I =20A GS D -- m 10 14 R Drain-Source On-State Resistance DS(on) V =4.5V, I =10A -- GS D 18 m 13 Dynamic Characteristics -- 1152 -- C Input Capacitance pF iss VDS=20V, C Output Capacitance oss -- -- 85 pF VGS=0V, F=1MHZ C Reverse Transfer Capacitance rss -- -- pF 73 =0V, Rg Gate resistance VGS -- 2.7 -- =0V,f=1.0MHz VDS Switching Times -- -- td(

 

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