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AGM418MBP Table 3. N- Channel Electrical Characteristics (TJ=25 unless otherwisenoted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 40 -- -- V GS D DSS Zero Gate Voltage Drain Current V =40V,V =0V -- -- 1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- nA GS DS 100 I GSS VGS(th) Gate Threshold Voltage V =V ,I =250 A DS GS D 1.2 1.6 2.5 V gFS Forward Transconductance V =5V,I =5A -- 10 -- S DS D V =10V, I =10A GS D -- m 18 24 R Drain-Source On-State Resistance DS(on) V =4.5V, I =5A -- GS D 32 m 22 Dynamic Characteristics -- 660 -- C Input Capacitance pF iss C Output Capacitance oss VDS=20V,VGS=0V, -- -- pF 92 F=1MHZ C Reverse Transfer Capacitance rss -- -- pF 33 =0V, Rg Gate resistance VGS -- 1.7 -- =0V,f=1.0MHz VDS Switching Times -- 4.5 -- t

 

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