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mmbtsc4081w.pdf Principales características:

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NPN Silicon Epitaxial Planar Transistor The transistor is subdivided into three groups Q, R and S according to its DC current gain. O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage VCBO 60 V Collector Emitter Voltage VCEO 50 V Emitter Base Voltage VEBO 7 V Collector Current IC 150 mA Power Dissipation Ptot 200 mW O Junction Temperature Tj 150 C O Storage Temperature Range Tstg - 55 to + 150 C O Characteristics at Ta = 25 C Parameter Symbol Min. Typ. Max. Unit DC Current Gain at VCE = 6 V, IC = 1 mA Current Gain Group Q hFE 120 - 270 - R hFE 180 - 390 - S hFE 270 - 560 - Collector Base Cutoff Current ICBO - - 0.1 A at VCB = 60 V Emitter Base Cutoff Current IEBO - - 0.1 A at VEB = 7 V Collector Base Breakdown Voltage V(BR)CBO 60 - - V at IC = 50 A Collector Emitter Breakdown Voltage

 

Keywords - ALL TRANSISTORS. Principales características

 mmbtsc4081w.pdf Design, MOSFET, Power

 mmbtsc4081w.pdf RoHS Compliant, Service, Triacs, Semiconductor

 mmbtsc4081w.pdf Database, Innovation, IC, Electricity

 

 
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