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hmg15n60 hmg15n60d hmg15n60f.pdf Principales características:

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HMG15N60D/HMG15N60/HMG15N60F 600V, 15A, Trench FS II IGBT General Description Using 's proprietary trench design and advanced FS (field stop) second generation technology, the 600V Trench FS II IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE sat High speed switching Positive temperature coefficient in V CE sat Very tight parameter distribution High ruggedness, temperature stable behavior Schematic diagram Application Air Condition Inverters Motor drives Package Marking and Ordering Information Device Marking Device Device Package D TO-263 D TO-220 F TO-220F F TO-263 TO-220 TO-220F Absolute Maximum Ratings (TC=25 unless otherwise noted) HMG15N60D Symbol Paramete

 

Keywords - ALL TRANSISTORS. Principales características

 hmg15n60 hmg15n60d hmg15n60f.pdf Design, MOSFET, Power

 hmg15n60 hmg15n60d hmg15n60f.pdf RoHS Compliant, Service, Triacs, Semiconductor

 hmg15n60 hmg15n60d hmg15n60f.pdf Database, Innovation, IC, Electricity

 

 
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