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HMG15N60D/HMG15N60/HMG15N60F600V, 15A, Trench FS II IGBTGeneral Description:Using 's proprietary trench design and advanced FS (field stop)second generation technology, the 600V Trench FS II IGBT offers superiorconduction and switching performances, and easy parallel operation;FeaturesTrench FSII Technology offering Very low VCEsat High speed switching Positive temperature coefficient in VCEsat Very tight parameter distribution High ruggedness, temperature stable behaviorSchematic diagramApplication Air Condition Inverters Motor drivesPackage Marking and Ordering InformationDevice MarkingDevice Device Package D TO-263 D TO-220 F TO-220F FTO-263 TO-220TO-220FAbsolute Maximum Ratings (TC=25unless otherwise noted)HMG15N60DSymbol Paramete
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hmg15n60 hmg15n60d hmg15n60f.pdf Проектирование, MOSFET, Мощность
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