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2sd965.pdf Principales características:

2SD965 BIPOLAR TRANSISTOR (NPN) FEATURES Large Collector Power Dissipation and Current Low Collector-Emitter Saturation Voltage Surface Mount device SOT-89 MECHANICAL DATA Case SOT-89 Case Material Molded Plastic. UL flammability Classification Rating 94V-0 Weight 0.055 grams (approximate) MAXIMUM RATINGS (T = 25 C unless otherwise noted) A Parameter Symbol Value Unit Collector-Base Voltage V 40 V CBO V Collector-Emitter Voltage CEO 20 V V Emitter-Base Voltage EBO 7 V Collector Current IC 5 A Collector Power Dissipation PC 750 mW Thermal Resistance From Junction To Ambient R 167 C/W JA Junction Temperature TJ 150 C Storage Temperature TSTG -55 +150 C ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise specified) A Parameter Symbol Min Typ Max Unit Conditions Collector-base breakdown voltage V(BR)CBO 40 V I =

Keywords - ALL TRANSISTORS. Principales características

 2sd965.pdf Design, MOSFET, Power

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