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mpgc50n65e.pdf Principales características:

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MPGC50N65E 650V-50A Trench and Field Stop IGBT Features Applications Easy parallel switching capability due to UPS positive temperature coefficient in VCEsat PFC Low VCEsat fast switching PTC Heater High ruggedness, good thermal stability Climate Compressor Very tight parameter distribution C Type Marking Package Code MPGC50N65E MPG50N65E TO-263 G E 1 Maximum Rated Values Parameter Symbol Value Unit Collector-emitter voltage VCE 650 V DC collector current2 TC=25 80 IC A TC=100 50 Pulsed collector current3 ICpuls 300 Gate-emitter voltage 20 VGE V Transient Gate-emitter voltage tp 10us) 30 Power dissipation TC=25 300 W Ptot TC=100 150 Operating junction temperature Tj -55 175 Storage temperature Tstg -55 150 1 Reference standard JESD-022 2 limited by Tjmax 3 Tp limited by Tjmax Therma

 

Keywords - ALL TRANSISTORS. Principales características

 mpgc50n65e.pdf Design, MOSFET, Power

 mpgc50n65e.pdf RoHS Compliant, Service, Triacs, Semiconductor

 mpgc50n65e.pdf Database, Innovation, IC, Electricity

 

 
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