Todos los transistores

2sc4226a 2sc4226b 2sc4226c 2sc4226d 2sc4226e.pdf Principales características:

2SC4226 NPN SILICON RF TRANSISTOR External bipolar process, with high power gain process, with high power gain Low noise characteristics. The adoption of noise characteristics. The adoption of submit- niature SOT- 323 package, Especially suitable for Especially suitable for high density surface patch installation, mainly for installation, mainly for the VHF, UHF low noise amplifier. SOT-323 1 Base 2 2 Emitter 3 Collector Feature High gain S21e 2 TYP. Value is 11dB @ VCE=3V IC=7mA f=1GHz dB Low noise NF TYP. Value is 1.4 @ VCE=3V IC=7mA f=1GHz 4dB fT (TYP.) TYP. Value is 4.5 @ VCE=3V IC=7mA f=1GHz 4.5GHz Absolute Maximum Ratings TA=25 Unless Otherwise noted PARAMETER SYMBLE MAXIMUM VALUE UNIT UNIT Collector-base breakdown voltage VCBO 20 V Collector-emitter breakdown voltage VCEO 12 V Emitter-base breakd

Keywords - ALL TRANSISTORS. Principales características

 2sc4226a 2sc4226b 2sc4226c 2sc4226d 2sc4226e.pdf Design, MOSFET, Power

 2sc4226a 2sc4226b 2sc4226c 2sc4226d 2sc4226e.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2sc4226a 2sc4226b 2sc4226c 2sc4226d 2sc4226e.pdf Database, Innovation, IC, Electricity