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2sa1106.pdf Principales características:

SPTECH Product Specification SPTECH Silicon PNP Power Transistor 2SA1106 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -140V(Min) (BR)CEO Good Linearity of h FE High Power Dissipation Complement to Type 2SC2581 APPLICATIONS Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -140 V CBO V Collector-Emitter Voltage -140 V CEO V Emitter-Base Voltage -6 V EBO I Collector Current-Continuous -10 A C I Base Current-Continuous -4 A B Collector Power Dissipation P 100 W C @ T =25 C T Junction Temperature 150 J Storage Temperature Range -55 150 T stg 1 SPTECH website www.superic-tech.com SPTECH Product Specification SPTECH Silicon PNP Power Transistor 2SA1106 ELECTRICAL CHARACTERISTICS T =25 unless otherwise specified C SYMBOL PAR

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