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ss8050.pdf Principales características:

ss8050ss8050

SS8050 SS8050 TRANSISTOR (NPN) SS8050 FEATURES Complimentary to SS8550 SOT-23 1 BASE MARKING Y1 2 EMITTER 3 COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1.5 A PC Collector Power Dissipation 0.3 W Tj Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 100 A, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC= 0.1mA, IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE=100 A, IC=0 5 V Collector cut-off current ICBO VCB=40V, IE=0 0.1 A Collector cut-off current ICEO VCB=20V, IE=0 0.1 A

 

Keywords - ALL TRANSISTORS. Principales características

 ss8050.pdf Design, MOSFET, Power

 ss8050.pdf RoHS Compliant, Service, Triacs, Semiconductor

 ss8050.pdf Database, Innovation, IC, Electricity

 

 
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