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fdpf10n60nz.pdf Principales características:

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FDPF10N60NZ www.VBsemi.tw N-Channel 650V (D-S) Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) at TJ max. 650 Low figure-of-merit (FOM) Ron x Qg Low input capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.68 43 Reduced switching and conduction losses Qg max. (nC) Ultra low gate charge (Qg) 5 Qgs (nC) Avalanche energy rated (UIS) 22 Qgd (nC) Configuration Single APPLICATIONS Server and telecom power supplies Switch mode power supplies (SMPS) Power factor correction power supplies (PFC) Lighting - High-intensity discharge (HID) - Fluorescent ballast lighting Industrial TO-220AB TO-220 FULLPAK D D2PAK (TO-263) G G D S S D G S G D S Top View N-Channel MOSFET Top View ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 650 V Gate

 

Keywords - ALL TRANSISTORS. Principales características

 fdpf10n60nz.pdf Design, MOSFET, Power

 fdpf10n60nz.pdf RoHS Compliant, Service, Triacs, Semiconductor

 fdpf10n60nz.pdf Database, Innovation, IC, Electricity

 

 
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