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irf530n.pdf Principales características:

IRF530N www.VBsemi.tw N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V(BR)DSS (V) RDS(on) ( )ID (A) 175 C Junction Temperature RoHS 0.092 at VGS = 10 V 100 18 COMPLIANT Low Thermal Resistance Package 100 % Rg Tested APPLICATIONS Isolated DC/DC Converters TO-220AB D G S G D S N-Channel MOSFET Top View ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted Parameter Symbol Limit Unit VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage 20 TC = 25 C 18 Continuous Drain Current (TJ = 175 C) ID TC = 125 C 15 A IDM Pulsed Drain Current 68 IAS Avalanche Current 18 L = 0.1 mH EAS 200 mJ Single Pulse Avalanche Energyb TC = 25 C 105 PD W Maximum Power Dissipationb TA = 25 Cd 3.75 TJ, Tstg Operating Junction and Storage Temperature Range - 55 to 175 C THERMAL RESI

Keywords - ALL TRANSISTORS. Principales características

 irf530n.pdf Design, MOSFET, Power

 irf530n.pdf RoHS Compliant, Service, Triacs, Semiconductor

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