irf540nstrpbf.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

irf540nstrpbf.pdf Principales características:

IRF540NSTRPBF www.VBsemi.tw N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETS V(BR)DSS (V) rDS(on) ( )ID (A) Available 175 C Junction Temperature 0.030 at VGS = 10 V 45 RoHS* 100 Low Thermal Resistance Package 0.035 at VGS = 4.5 V 40 COMPLIANT D D2PAK (TO-263) G D G S S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted Parameter Symbol Limit Unit VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage 20 TC = 25 C 45 Continuous Drain Current (TJ = 175 C) ID TC = 125 C 30 A IDM Pulsed Drain Current 135 IAR Avalanche Current 35 L = 0.1 mH EAR 61 mJ Repetitive Avalanche Energya TC = 25 C 127b PD Maximum Power Dissipationa W TA = 25 Cc 3.75 TJ, Tstg Operating Junction and Storage Temperature Range - 55 to 175 C THERMAL RESISTANCE RATINGS Parameter Sy