irf540zp.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

irf540zp.pdf Principales características:

IRF540ZP www.VBsemi.tw N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V(BR)DSS (V) rDS(on) ( )ID (A) 175 C Junction Temperature RoHS 0.018 at VGS = 10 V 100 70a COMPLIANT Low Thermal Resistance Package 100 % Rg Tested APPLICATIONS Isolated DC/DC Converters TO-220AB D G G D S S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted Parameter Symbol Limit Unit VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage 20 TC = 25 C 70a Continuous Drain Current (TJ = 175 C) ID TC = 125 C 35a A IDM Pulsed Drain Current 145 IAS Avalanche Current 31 L = 0.1 mH EAS 60 mJ Single Pulse Avalanche Energyb TC = 25 C 355c PD W Maximum Power Dissipationb TA = 25 Cd 3.35 TJ, Tstg Operating Junction and Storage Temperature Range - 55 to 175 C THERMAL