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VBZA4435 www.VBsemi.com P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.018 at VGS = - 10 V - 9.0 TrenchFET Power MOSFET - 30 13 nC 100 % Rg Tested 0.024 at VGS = - 4.5 V - 7.8 APPLICATIONS Load Switch Battery Switch S SO-8 S 1 8 D G S D 2 7 S 3 6 D G D 4 5 D Top View P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted Parameter Symbol Limit Unit VDS Drain-Source Voltage - 30 V VGS Gate-Source Voltage 20 TC = 25 C - 9.0 TC = 70 C - 7.2 Continuous Drain Current (TJ = 150 C) ID TA = 25 C - 7.0a, b TA = 70 C - 5.6a, b A IDM - 30 Pulsed Drain Current TC = 25 C - 3.5 IS Continuous Source-Drain Diode Current TA = 25 C - 2.1a, b TC = 25 C 4.2 TC = 70 C 2.7 PD Maximum Powe

 

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