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mmbt3906l mmbt3906h.pdf Principales características:

YFSEMI ELECTRON SOT-23 Plastic-Encapsulate Transistors MMBT3906 TRANSISTOR (PNP) SOT 23 FEATURES As complementary type, the NPN transistor MMBT3904 is Recommended Epitaxial planar die construction 1. BASE MARKING 2A 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.2 A PC Collector Dissipation 0.2 W R Thermal resistance junction to ambient 625 /W JA TJ Junction Temperature 150 Tstg Storage Temperature -55 +150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-10 A, IE=0 -40 V Collector-emitter breakdown

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