cs15n50f a9r.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

cs15n50f a9r.pdf Principales características:

Silicon N-Channel Power MOSFET R CS15N50F A9R General Description VDSS 500 V CS15N50F A9R, the silicon N-channel Enhanced VDMOSFETs, ID 15 A PD(TC=25 ) 70 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 0.3 the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220F, which accords with the RoHS standard. Features Fast Switching Low ON Resistance(Rdson 0.4 ) Low Gate Charge (Typical Data 50nC) Low Reverse transfer capacitances(Typical 25.5pF) 100% Single Pulse avalanche energy Test Applications Automotive DC Motor Control and Class D Amplifier. Absolute Tc= 25 unless otherwise specified Symbol Parameter Ratin