fdmc4435bz.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

fdmc4435bz.pdf Principales características:

September 2010 FDMC4435BZ P-Channel Power Trench MOSFET -30 V, -18 A, 20 m Features General Description Max rDS(on) = 20 m at VGS = -10 V, ID = -8.5 A This P-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 37 m at VGS = -4.5 V, ID = -6.3 A been especially tailored to minimize the on-state resistance. This Extended VGSS range (-25 V) for battery applications device is well suited for Power Management and load High performance trench technology for extremely low rDS(on) switching applications common in Notebook Computers and Portable Battery Packs. High power and current handling capability Applications HBM ESD protection level >7 kV typical (Note 4) High side in DC - DC Buck Converters 100% UIL Tested Notebook battery power management Termination is Lead-free and RoHS Compliant