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fdpf085n10a.pdf Principales características:

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November 2013 FDPF085N10A N-Channel PowerTrench MOSFET 100 V, 40 A, 8.5 m Features Description RDS(on) = 6.5 m (Typ.) @ VGS = 10 V, ID = 40 A This N-Channel MOSFET is produced using Fairchild Semicon- ductor s advanced PowerTrench process that has been tai- Fast Switching Speed lored to minimize the on-state resistance while maintaining Low Gate Charge, QG = 31 nC (Typ.) superior switching performance. High Performance Trench Technology for Extremely Low Applications RDS(on) Consumer Appliances High Power and Current Handling Capability LED TV RoHS Compliant Synchronous Rectification for ATX / Sever / Telecom PSU Motor Drives and Uninterruptible Power Supplies Micro Solar Inverter D G G DS TO-220F S Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol Parameter FDPF085N10A Unit VDSS Drain t

 

Keywords - ALL TRANSISTORS. Principales características

 fdpf085n10a.pdf Design, MOSFET, Power

 fdpf085n10a.pdf RoHS Compliant, Service, Triacs, Semiconductor

 fdpf085n10a.pdf Database, Innovation, IC, Electricity

 

 

 


 
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