fdpf085n10a.pdf datasheet:

November 2013FDPF085N10AN-Channel PowerTrench MOSFET100 V, 40 A, 8.5 mFeatures Description RDS(on) = 6.5 m (Typ.) @ VGS = 10 V, ID = 40 A This N-Channel MOSFET is produced using Fairchild Semicon-ductors advanced PowerTrench process that has been tai- Fast Switching Speedlored to minimize the on-state resistance while maintaining Low Gate Charge, QG = 31 nC (Typ.)superior switching performance. High Performance Trench Technology for Extremely LowApplicationsRDS(on) Consumer Appliances High Power and Current Handling Capability LED TV RoHS Compliant Synchronous Rectification for ATX / Sever / Telecom PSU Motor Drives and Uninterruptible Power Supplies Micro Solar InverterDGGDSTO-220FSAbsolute Maximum Ratings TC = 25oC unless otherwise noted.Symbol Parameter FDPF085N10A UnitVDSS Drain t