fds4435bz.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

fds4435bz.pdf Principales características:

April 2009 FDS4435BZ P-Channel PowerTrench MOSFET -30V, -8.8A, 20m Features General Description Max rDS(on) = 20m at VGS = -10V, ID = -8.8A This P-Channel MOSFET is produced using Fairchild Max rDS(on) = 35m at VGS = -4.5V, ID = -6.7A Semiconductor s advanced PowerTrench process that has Extended VGSS range (-25V) for battery applications been especially tailored to minimize the on-state resistance. HBM ESD protection level of 3.8KV typical (note 3) This device is well suited for Power Management and load High performance trench technology for extremely low rDS(on) switching applications common in Notebook Computers and High power and current handling capability Portable Battery Packs. Termination is Lead-free and RoHS compliant D D D D 4 G 5 D D 6 3 S 7 2 S D G S D 8 S 1 S S Pin 1 SO-8 MOSFET Maximum Ratings TA = 25 C unless other