fga25n120antdtu f109.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

fga25n120antdtu f109.pdf Principales características:

u July, 2007 FGA25N120ANTD/FGA25N120ANTD_F109 tm 1200V NPT Trench IGBT Features Description NPT Trench Technology, Positive temperature coefficient Using Fairchild's proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction Low saturation voltage VCE(sat), typ = 2.0V and switching performances, high avalanche ruggedness and @ IC = 25A and TC = 25 C easy parallel operation. Low switching loss Eoff, typ = 0.96mJ This device is well suited for the resonant or soft switching appli- @ IC = 25A and TC = 25 C cation such as induction heating, microwave oven, etc. Extremely enhanced avalanche capability C C G G TO-3PN G C E E E Absolute Maximum Ratings Symbol Description FGA25N120ANTD Units VCES Collector-Emitter Voltage 1200 V VGES Gate-Emitter Voltage 20 V IC Collector Current @ TC = 25 C 50