fga25n120antdtu f109.pdf datasheet:

uJuly, 2007FGA25N120ANTD/FGA25N120ANTD_F109tm1200V NPT Trench IGBTFeatures Description NPT Trench Technology, Positive temperature coefficient Using Fairchild's proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction Low saturation voltage: VCE(sat), typ = 2.0V and switching performances, high avalanche ruggedness and @ IC = 25A and TC = 25Ceasy parallel operation. Low switching loss: Eoff, typ = 0.96mJ This device is well suited for the resonant or soft switching appli-@ IC = 25A and TC = 25Ccation such as induction heating, microwave oven, etc. Extremely enhanced avalanche capabilityCCGGTO-3PNG C EEEAbsolute Maximum RatingsSymbol Description FGA25N120ANTD UnitsVCES Collector-Emitter Voltage 1200 VVGES Gate-Emitter Voltage 20 VIC Collector Current @ TC = 25C 50