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fgpf4533.pdf Principales características:

August 2010 FGPF4533 330V, PDP IGBT Features General Description High current capability Using Novel Trench IGBT Technology, Fairchild s new series of trench IGBTs offer the optimum performance for PDP applica- Low saturation voltage VCE (sat) =1.55 V @ IC = 50 A tions where low conduction and switching losses are essential. High input impedance Fast switching RoHS compliant Applications PDP System TO-220F G C E (Retractable) Absolute Maximum Ratings Symbol Description Ratings Units VCES Collector to Emitter Voltage 330 V VGES Gate to Emitter Voltage 30 V @ TC = 25oC 200 A IC pulse(1)* Collector Current Maximum Power Dissipation @ TC = 25oC 28.4 W PD Maximum Power Dissipation @ TC = 100oC 11.4 W o TJ Operating Junction Temperature -55 to +150 C o Tstg Storage Temperature Range -55 to +150 C Maximum Lead Temp. for solderi

Keywords - ALL TRANSISTORS. Principales características

 fgpf4533.pdf Design, MOSFET, Power

 fgpf4533.pdf RoHS Compliant, Service, Triacs, Semiconductor

 fgpf4533.pdf Database, Innovation, IC, Electricity