hrf3205.pdf Principales características:
HRF3205, HRF3205S Data Sheet December 2001 100A, 55V, 0.008 Ohm, N-Channel, Power Features MOSFETs 100A, 55V (See Note) These are N-Channel enhancement mode silicon gate Low On-Resistance, rDS(ON) = 0.008 power field effect transistors. They are advanced power Temperature Compensating PSPICE Model MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode Thermal Impedance SPICE Model of operation. All of these power MOSFETs are designed for UIS Rating Curve applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high Related Literature power bipolar switching transistors requiring high speed and - TB334, Guidelines for Soldering Surface Mount low gate drive power. These types can be operated directly Components to
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