hrf3205.pdf datasheet:

HRF3205, HRF3205SData Sheet December 2001100A, 55V, 0.008 Ohm, N-Channel, Power FeaturesMOSFETs 100A, 55V (See Note)These are N-Channel enhancement mode silicon gate Low On-Resistance, rDS(ON) = 0.008power field effect transistors. They are advanced power Temperature Compensating PSPICE ModelMOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode Thermal Impedance SPICE Modelof operation. All of these power MOSFETs are designed for UIS Rating Curveapplications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high Related Literature power bipolar switching transistors requiring high speed and - TB334, Guidelines for Soldering Surface Mount low gate drive power. These types can be operated directly Components to