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irfp150a.pdf Principales características:

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IRFP150A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS(on) = 0.04 Rugged Gate Oxide Technology Lower Input Capacitance ID = 43 A Improved Gate Charge Extended Safe Operating Area TO-3P 175 C Operating Temperature A (Max.) @ VDS = 100V Lower Leakage Current 10 Lower RDS(ON) 0.032 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 100 Continuous Drain Current (TC=25 ) C 43 ID A Continuous Drain Current (TC=100 ) C 30.4 IDM Drain Current-Pulsed 1 170 A O VGS Gate-to-Source Voltage + V _ 0 EAS Single Pulsed Avalanche Energy 2 740 mJ O IAR Avalanche Current 1 43 A O EAR Repetitive Avalanche Energy 1 19.3 mJ O 3 dv/dt Peak Diode Recovery dv/dt 6.5 V/ns O Total Power Dissipation (TC=25 ) W C 193

 

Keywords - ALL TRANSISTORS. Principales características

 irfp150a.pdf Design, MOSFET, Power

 irfp150a.pdf RoHS Compliant, Service, Triacs, Semiconductor

 irfp150a.pdf Database, Innovation, IC, Electricity

 

 
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