irfp150a.pdf datasheet:

IRFP150AAdvanced Power MOSFETFEATURESBVDSS = 100 V Avalanche Rugged TechnologyRDS(on) = 0.04 Rugged Gate Oxide Technology Lower Input CapacitanceID = 43 A Improved Gate Charge Extended Safe Operating AreaTO-3P 175 C Operating TemperatureA (Max.) @ VDS = 100V Lower Leakage Current : 10 Lower RDS(ON) : 0.032 (Typ.) 1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value UnitsVDSS Drain-to-Source Voltage V100Continuous Drain Current (TC=25 )C 43IDAContinuous Drain Current (TC=100 )C 30.4IDM Drain Current-Pulsed 1170 AOVGS Gate-to-Source Voltage +V_ 0EAS Single Pulsed Avalanche Energy 2740 mJOIAR Avalanche Current1 43 AOEAR Repetitive Avalanche Energy 1 19.3 mJO3dv/dt Peak Diode Recovery dv/dt6.5 V/nsOTotal Power Dissipation (TC=25 ) WC 193