irfp254b.pdf Principales características:
November 2001 IRFP254B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 25A, 250V, RDS(on) = 0.14 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 95 nC) planar, DMOS technology. Low Crss ( typical 60 pF) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. D G
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irfp254b.pdf Design, MOSFET, Power
irfp254b.pdf RoHS Compliant, Service, Triacs, Semiconductor
irfp254b.pdf Database, Innovation, IC, Electricity
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