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irfp254b.pdf datasheet:

irfp254birfp254b

November 2001IRFP254B250V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 25A, 250V, RDS(on) = 0.14 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 95 nC)planar, DMOS technology. Low Crss ( typical 60 pF)This advanced technology has been especially tailored to Fast switchingminimize on-state resistance, provide superior switching 100% avalanche testedperformance, and withstand high energy pulse in the Improved dv/dt capabilityavalanche and commutation mode. These devices are wellsuited for high efficiency switching DC/DC converters andswitch mode power supplies.DG

 

Keywords - ALL TRANSISTORS DATASHEET

 irfp254b.pdf Design, MOSFET, Power

 irfp254b.pdf RoHS Compliant, Service, Triacs, Semiconductor

 irfp254b.pdf Database, Innovation, IC, Electricity

 

 
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